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Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)



Dustin Hite, Shu-Jung Tang, Phillip T. Sprunger


Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (1175 K) results in the formation of a universal ring cluster structure suggesting a Be?Si bond length less than 2.5 A, in agreement with previous calculations regarding hypothetical Be2Si.
Chemical Physics Letters


growth, silicide formation, surface


Hite, D. , Tang, S. and Sprunger, P. (2003), Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7), Chemical Physics Letters (Accessed April 20, 2024)
Created December 31, 2002, Updated October 12, 2021