Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)

Published

Author(s)

Dustin Hite, Shu-Jung Tang, Phillip T. Sprunger

Abstract

Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (1175 K) results in the formation of a universal ring cluster structure suggesting a Be?Si bond length less than 2.5 A, in agreement with previous calculations regarding hypothetical Be2Si.
Citation
Chemical Physics Letters
Volume
367

Keywords

growth, silicide formation, surface

Citation

Hite, D. , Tang, S. and Sprunger, P. (2003), Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7), Chemical Physics Letters (Accessed April 20, 2024)
Created December 31, 2002, Updated October 12, 2021