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Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)

Published

Author(s)

Dustin A. Hite, Shu-Jung Tang, Phillip T. Sprunger

Abstract

Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (~1175 K) results in the formation of a universal ring cluster structure suggesting a Be?Si bond length less than 2.5 A, in agreement with previous calculations regarding hypothetical Be2Si.
Citation
Chemical Physics Letters
Volume
367

Keywords

growth, silicide formation, surface
Created January 1, 2003, Updated February 19, 2017