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Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films



M A. Sahiner, Joseph Woicik, P Gao, P McKeown, Mark Croft, M Gartman, B Benapfl


The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the evershrinking dimensions of the active device, metal-oxide-semiconductor-field-effect-transistor (MOSFET), in the circuit create other physical challenges. The industry standard SiO2 for the gate region is reaching to its physical limits. New materials with higher dielectric constant are needed to replace the silicon dioxide in these gate regions. One of the candidates for this replacement is Hf based oxides. In this project, we have used pulsed laser deposition to synthesize Hf-based high-k dielectric films on Si single crystal substrates with varying deposition parameters and mixtures of HfO2 and ZrO2 then used XAFS in order to probe the local structure around the Hf metal. The local structural information extracted through XAFS has been correlated with the deposition parameters such as the substrate temperature and the HfO2, to ZrO2 ratio in the mixtures.
Thin Solid Films


CMOS, complementary metal oxide semiconductor, HfO2, x-ray absorption fine structure, XAFS, ZrO2


Sahiner, M. , Woicik, J. , Gao, P. , McKeown, P. , Croft, M. , Gartman, M. and Benapfl, B. (2021), Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films, Thin Solid Films (Accessed May 25, 2024)


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Created October 12, 2021