Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological Insulator Interface

Published

August 17, 2015

Author(s)

Mingda Li, Cui-Zu Chang, Brian Kirby, Michelle E. Jamer, Wenping Cui, Lijun Wu, Peng Wei, Yimei Zhu, Don Heiman, Ju Li, Jagadeesh S. Moodera

Abstract

Magnetic exchange driven proximity effect at a magnetic insulator/topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb_2-xV_xTe₃ hybrid heterostructure, where V doping is used to drive the TI (Sb₂Te₃) magnetic. We observe an artificial antiferromagnetic-like structure near the Mi/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

Citation

Physical Review Letters

Volume

115

Issue

8

Pub Type

Journals

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Keywords

PNR, magnetic multilayers

Citation

Li, M. , Chang, C. , Kirby, B. , Jamer, M. , Cui, W. , Wu, L. , Wei, P. , Zhu, Y. , Heiman, D. , Li, J. and Moodera, J. (2015), Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological Insulator Interface, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918691 (Accessed December 6, 2024)