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Properties of TiN for Detector and Amplifier Applications



Jiansong Gao, Michael R. Vissers, Martin O. Sandberg, Dale Li, Hsiao-Mei Cho, Clint Bockstiegel, Ben Mazin, Henry G. Leduc, Saptarshi Chaudhuri, David P. Pappas, K D. Irwin


We have experimentally explored and carefully characterized the important properties of TiN, including the resistivity, nonlinear kinetic inductance, the anomalous electro-dynamical response, and the two-level-system induced frequency shift and noise. We suggest that some of these properties, which are not well understood and are different from conventional superconductors, need further study and special consideration in kinetic inductance detector and parametric amplifier applications.
Journal of Low Temperature Physics


Kinetic inductance detector, Parametric amplifier, Two-level system, Titanium nitride
Created February 8, 2014, Updated February 19, 2017