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Properties of TiN for Detector and Amplifier Applications

Published

Author(s)

Jiansong Gao, Michael R. Vissers, Martin O. Sandberg, Dale Li, Hsiao-Mei Cho, Clint Bockstiegel, Ben Mazin, Henry G. Leduc, Saptarshi Chaudhuri, David P. Pappas, K D. Irwin

Abstract

We have experimentally explored and carefully characterized the important properties of TiN, including the resistivity, nonlinear kinetic inductance, the anomalous electro-dynamical response, and the two-level-system induced frequency shift and noise. We suggest that some of these properties, which are not well understood and are different from conventional superconductors, need further study and special consideration in kinetic inductance detector and parametric amplifier applications.
Citation
Journal of Low Temperature Physics

Keywords

Kinetic inductance detector, Parametric amplifier, Two-level system, Titanium nitride

Citation

Gao, J. , Vissers, M. , Sandberg, M. , Li, D. , Cho, H. , Bockstiegel, C. , Mazin, B. , Leduc, H. , Chaudhuri, S. , Pappas, D. and Irwin, K. (2014), Properties of TiN for Detector and Amplifier Applications, Journal of Low Temperature Physics (Accessed June 21, 2024)

Issues

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Created February 8, 2014, Updated February 19, 2017