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Pressure-Induced Optoelectronic Properties of InP Nanocrystals: Tight-Binding Approach
Published
Author(s)
J G. Diaz, W Jaskolski, M Zielinski, Garnett W. Bryant
Abstract
An empirical tight-binding theory is used to investigate pressure effects on the electronic and optical properties of InP nanocrystals. For bulk InP, our model predicts the Gamma - X crossing of the conduction band minima at exactly the same lattice contraction as measured in the experiment. For small InP nanocrystals, the model correctly predicts the pressure dependence of the fundamental energy gap and luminescence intensity.
Diaz, J.
, Jaskolski, W.
, Zielinski, M.
and Bryant, G.
(2021),
Pressure-Induced Optoelectronic Properties of InP Nanocrystals: Tight-Binding Approach, Physica Status Solidi
(Accessed September 24, 2023)