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Pressure-Induced Optoelectronic Properties of InP Nanocrystals: Tight-Binding Approach

Published

Author(s)

J G. Diaz, W Jaskolski, M Zielinski, Garnett W. Bryant

Abstract

An empirical tight-binding theory is used to investigate pressure effects on the electronic and optical properties of InP nanocrystals. For bulk InP, our model predicts the Gamma - X crossing of the conduction band minima at exactly the same lattice contraction as measured in the experiment. For small InP nanocrystals, the model correctly predicts the pressure dependence of the fundamental energy gap and luminescence intensity.
Citation
Physica Status Solidi

Keywords

electronic structure, nanocrystal, pressure, quantum dot, strain

Citation

Diaz, J. , Jaskolski, W. , Zielinski, M. and Bryant, G. (2021), Pressure-Induced Optoelectronic Properties of InP Nanocrystals: Tight-Binding Approach, Physica Status Solidi (Accessed May 24, 2024)

Issues

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Created October 12, 2021