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Pressure Evolution of Electrical Transport in the 3D Topological Insulator (Bi,Sb)2(Se,Te)3



J.R. Jeffries, Nicholas Butch, Y.K. Vohra, S. T. Weir


The group V-VI compounds - like Bi2Se3, Sb2Te3, or Bi2Te3 - have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb)2(Te,Se)3 compound. Similar to some of its sister compounds, the (Bi,Sb)2(Te,Se)3 pseudiobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.
Journal of Physics: Conference Series


topological, pressure, superconductivity


Jeffries, J. , Butch, N. , Vohra, Y. and Weir, S. (2015), Pressure Evolution of Electrical Transport in the 3D Topological Insulator (Bi,Sb)<sub>2</sub>(Se,Te)<sub>3</sub>, Journal of Physics: Conference Series, [online], (Accessed April 14, 2024)
Created March 17, 2015, Updated October 12, 2021