Jeffries, J.
, Butch, N.
, Vohra, Y.
and Weir, S.
(2015),
Pressure Evolution of Electrical Transport in the 3D Topological Insulator (Bi,Sb)<sub>2</sub>(Se,Te)<sub>3</sub>, Journal of Physics: Conference Series, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917391
(Accessed March 13, 2025)
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Pressure Evolution of Electrical Transport in the 3D Topological Insulator (Bi,Sb)2(Se,Te)3
Published
Author(s)
J.R. Jeffries, , Y.K. Vohra, S. T. Weir
Abstract
The group V-VI compounds - like Bi2Se3, Sb2Te3, or Bi2Te3 - have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb)2(Te,Se)3 compound. Similar to some of its sister compounds, the (Bi,Sb)2(Te,Se)3 pseudiobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.Citation
Journal of Physics: Conference Series
Volume
592
Pub Type
Journals
Download Paper
Keywords
topological, pressure, superconductivity
Citation
Issues
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Created March 17, 2015, Updated October 12, 2021