Precise evaluation of the 129 k? and 1 M? quantum Hall array devices for a quantum Wheatstone bridge
Takehiko Oe, Alireza R. Panna, Randolph E. Elmquist, Dean G. Jarrett, Yasuhiro Fukuyama, Nobu-Hisa Kaneko
We have fabricated 129 kΩ and 1 MΩ quantum Hall array devices using GaAs/AlGaAs heterostructures and their quantized Hall resistance plateaus were precisely evaluated with an accuracy of better than 5×10-8 based on NISTs quantized Hall resistance standard via stable standard resistors. These higher quantized values have been attracting industrial interests for applications such as precise small electric power (small current) measurements, leakage current, and electrical insulation measurements. Given these quantum Hall array devices, an accuracy of better than 1×10-7 for 10 MΩ resistance standard measurements will be achieved, through a simple cryogenic quantum Wheatstone bridge technique. These devices could also be utilized for a quantum voltage divider.
2020 Conference on Precision Electromagnetic Measurements (CPEM)
August 24-28, 2020
Conference on Precision Electromagnetic Measurements (CPEM)
Quantum Hall effect, Resistance standard, Quantum Hall array resistance standards, GaAs/AlGaAs, High resistance measurement