Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free MBE

Published

June 28, 2006

Author(s)

John B. Schlager, Norman Sanford, Kristine A. Bertness, Joy Barker, Alexana Roshko, Paul T. Blanchard

Abstract

Polarization- and temperature-dependent photoluminescence (PL) measurements were performed on individual GaN nanowires. These were grown by catalyst-free molecular beam epitaxy on Si(111) substrates, ultrasonically removed, and subsequently dispersed on sapphire substrates. The wires were typically 5-10 micrometers in length, c-axis oriented, and 30 - 100 nm in diameter. Single wires produced sufficient emission intensity to enable high signal-to-noise PL data. Polarized PL spectra differed for the sigma and pi polarization cases, illustrating the polarization anisotropy of the exciton emission associated with high-quality wurtzite GaN. This anisotropy in PL emission persisted even up to room temperature (4 K to 296 K). Additionally, the nanowire PL varied with excitation intensity and with (325 nm) pump exposure time.

Proceedings Title

Journal of Electronic Materials

Conference Dates

June 28-30, 2006

Conference Location

University Park, PA, USA

Conference Title

2006 Electronic Materials Conference Technical Program

Pub Type

Conferences

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Keywords

catalyst-free growth, gallium nitride, molecular beam epitaxy, nanowire, polarization-resolved photoluminescence

Citation

Schlager, J. , Sanford, N. , Bertness, K. , Barker, J. , Roshko, A. and Blanchard, P. (2006), Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free MBE, Journal of Electronic Materials, University Park, PA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32205 (Accessed January 14, 2025)