Photoreflectance Study of the Electronic Structure of Si-Doped InyGa1-yAs1-xNx Films With x

Published

March 1, 2005

Author(s)

Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad

Abstract

The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between20 K and 300 K. The measured critical-point energies were described by a band anti-crossing (BAC) modelwith the addition of a Burstein-Moss band-filling term. The energy difference between the nitrogenimpurity level and conduction band edge was (0.3004 0.0101) eV at 20 K, and (0.3286 0.0089) eV at295 K; the BAC interaction parameter was (2.588 0.071) eV. It was inferred from the magnitude of theBurstein-Moss shift that the near-surface carrier concentration, probed by PR, is reduced from the bulk(Hall effect) carrier concentration by a reduction factor of 0.266 0.145. The effect of strain on the PR energieswas too small to observe.

Citation

Journal of Applied Physics

Volume

2 No 7

Pub Type

Journals

Keywords

band anti-crossing model, compound semiconductor, electronic band structure, infrared optoelectronics, nitrogen impurity level, photoreflectance spectroscopy

Citation

Kang, Y. , Robins, L. , Birdwell, A. , Shapiro, A. , Thurber, W. , Vaudin, M. , Fahmi, M. , Bryson, D. and Mohammad, S. (2005), Photoreflectance Study of the Electronic Structure of Si-Doped InyGa_1-yAs_1-xN_x Films With x<0.012, Journal of Applied Physics (Accessed December 14, 2024)