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Photon Echoes in Disordered Semiconductor Quantum Wells



D G. Steel, Steven T. Cundiff


Photon echo spectroscopy provides an important tool for studying excitonic relaxation in disordered quantum wells. Localization of excitons due to interface fluctuations results in inhoniogeneous broadening of the spectrum and relaxation due to migration among localization sites. The temperature and energy dependence of the relaxation rates indicate complex scattering mechanisms. The dependence of the photon echo signal on polarization of the incident pulses shows a dramatic change in the broadening and dephasing characteristics. This response is interpreted in terms of polarization selection of localized versus delocalized excitons. Mechanisms for the polarization dependence arediscussed in terms of coupling between opposite spin excitons.
Laser Physics


photon echoes, quantum wells, semiconductors


Steel, D. and Cundiff, S. (2021), Photon Echoes in Disordered Semiconductor Quantum Wells, Laser Physics (Accessed May 17, 2024)


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Created October 12, 2021