Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Photon Echoes in Disordered Semiconductor Quantum Wells

Published

Author(s)

D G. Steel, Steven T. Cundiff

Abstract

Photon echo spectroscopy provides an important tool for studying excitonic relaxation in disordered quantum wells. Localization of excitons due to interface fluctuations results in inhoniogeneous broadening of the spectrum and relaxation due to migration among localization sites. The temperature and energy dependence of the relaxation rates indicate complex scattering mechanisms. The dependence of the photon echo signal on polarization of the incident pulses shows a dramatic change in the broadening and dephasing characteristics. This response is interpreted in terms of polarization selection of localized versus delocalized excitons. Mechanisms for the polarization dependence arediscussed in terms of coupling between opposite spin excitons.
Citation
Laser Physics

Keywords

photon echoes, quantum wells, semiconductors

Citation

Steel, D. and Cundiff, S. (2021), Photon Echoes in Disordered Semiconductor Quantum Wells, Laser Physics (Accessed May 17, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 12, 2021