Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Photoluminescence Quenching in Si1-xGex/Si Multiple Quantum Wells Grown With Atomic Hydrogen

Published

Author(s)

Greg Balchin, Paul M. Amirtharaj, C Silvestre, P E. Thompson

Abstract

We compare the photoluminescence spectra from a series of Si1-xGex/Si (0.1 {1-xGex/Si MQW samples grown without atomic hydrogen. No quantum confined photoluminescence was observed in the Si1-xGex/Si MQW samples grown with atomic hydrogen. This was unexpected since quantum confined photoluminescence has been observed in the hydrogen-assisted growth of Si1-xGex/Si quantum-well structures grown at lower temperatures by other researchers. We believe that this is caused by defects, introduced into the samples during growth with atomic hydrogen, which lead to efficient non-radiative centers that compete with the radiative centers. These defects lead to a reduction of the photoluminescence of the samples grown with atomic hydrogen. Since hydrogen is used as a surfactant to reduce the deleterious effects due to Ge segregation, understanding its role is an important step in SiGe materials development.
Citation
Applied Physics
Volume
85
Issue
No. 3

Keywords

atomic hydrogen, multiple quantum wells, photoluminescence, SiGe, strain, surfacant

Citation

Balchin, G. , Amirtharaj, P. , Silvestre, C. and Thompson, P. (1999), Photoluminescence Quenching in Si<sub>1-x</sub>Ge<sub>x</sub>/Si Multiple Quantum Wells Grown With Atomic Hydrogen, Applied Physics (Accessed February 26, 2024)
Created March 1, 1999, Updated February 17, 2017