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Photoluminescence Quenching in Si1-xGex/Si Multiple Quantum Wells Grown With Atomic Hydrogen



Greg Balchin, Paul M. Amirtharaj, C Silvestre, P E. Thompson


We compare the photoluminescence spectra from a series of Si1-xGex/Si (0.1 {1-xGex/Si MQW samples grown without atomic hydrogen. No quantum confined photoluminescence was observed in the Si1-xGex/Si MQW samples grown with atomic hydrogen. This was unexpected since quantum confined photoluminescence has been observed in the hydrogen-assisted growth of Si1-xGex/Si quantum-well structures grown at lower temperatures by other researchers. We believe that this is caused by defects, introduced into the samples during growth with atomic hydrogen, which lead to efficient non-radiative centers that compete with the radiative centers. These defects lead to a reduction of the photoluminescence of the samples grown with atomic hydrogen. Since hydrogen is used as a surfactant to reduce the deleterious effects due to Ge segregation, understanding its role is an important step in SiGe materials development.
Applied Physics
No. 3


atomic hydrogen, multiple quantum wells, photoluminescence, SiGe, strain, surfacant


Balchin, G. , Amirtharaj, P. , Silvestre, C. and Thompson, P. (1999), Photoluminescence Quenching in Si<sub>1-x</sub>Ge<sub>x</sub>/Si Multiple Quantum Wells Grown With Atomic Hydrogen, Applied Physics (Accessed February 26, 2024)
Created March 1, 1999, Updated February 17, 2017