Photoluminescence Quenching in Si1-xGex/Si Multiple Quantum Wells Grown With Atomic Hydrogen

Published

March 1, 1999

Author(s)

Greg Balchin, Paul M. Amirtharaj, C Silvestre, P E. Thompson

Abstract

We compare the photoluminescence spectra from a series of Si_1-xGe_x/Si (0.1 {1-xGe_x/Si MQW samples grown without atomic hydrogen. No quantum confined photoluminescence was observed in the Si_1-xGe_x/Si MQW samples grown with atomic hydrogen. This was unexpected since quantum confined photoluminescence has been observed in the hydrogen-assisted growth of Si_1-xGe_x/Si quantum-well structures grown at lower temperatures by other researchers. We believe that this is caused by defects, introduced into the samples during growth with atomic hydrogen, which lead to efficient non-radiative centers that compete with the radiative centers. These defects lead to a reduction of the photoluminescence of the samples grown with atomic hydrogen. Since hydrogen is used as a surfactant to reduce the deleterious effects due to Ge segregation, understanding its role is an important step in SiGe materials development.

Citation

Applied Physics

Volume

85

Issue

No. 3

Pub Type

Journals

Keywords

atomic hydrogen, multiple quantum wells, photoluminescence, SiGe, strain, surfacant

Citation

Balchin, G. , Amirtharaj, P. , Silvestre, C. and Thompson, P. (1999), Photoluminescence Quenching in Si_1-xGe_x/Si Multiple Quantum Wells Grown With Atomic Hydrogen, Applied Physics (Accessed December 7, 2024)