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Photoluminescence Polarization in Strained GaN/AlGaN Core/Shell Nanowires



G. Jacopin, L. Rigutti, S. Bellei, P. Lavenus, F. H. Julien, Albert Davydov, Denis Tsvetkov, Kristine A. Bertness, Norman Sanford, John B. Schlager, M. Tchemycheva


The polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (µ-PL) and interpreted in terms of a strain dependent 6x6 k.p theoretical model. The NW heterostructures were fabricated in 2 steps: the n-type c-axis GaN NW cores were grown by molecular beam epitaxy (MBE) and then epitaxially overgrown using a halide vapor phase epitaxy (HVPE) to form p-AlGaN shells. The emission of the uncoated strain-free GaN NW core is shown to be polarized perpendicular to the c-axis, while the GaN core compressively strained by the AlGaN shell exhibits a polarization parallel to the NW c-axis. The luminescence of the AlGaN shell is weakly polarized perpendicular to the c-axis due to the tensile axial strain in the shell.


GaN nanowire, photoluminescence, polarization, stress


Jacopin, G. , Rigutti, L. , Bellei, S. , Lavenus, P. , Julien, F. , Davydov, A. , Tsvetkov, D. , Bertness, K. , Sanford, N. , Schlager, J. and Tchemycheva, M. (2012), Photoluminescence Polarization in Strained GaN/AlGaN Core/Shell Nanowires, Nanotechnology, [online], (Accessed June 20, 2024)


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Created August 16, 2012, Updated October 12, 2021