Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Phase-Correct Bond Lengths in Crystalline-GexSil-x Alloys



Joseph Woicik, K E. Miyano, C A. King, R W. Johnson, J G. Pellegrino, T L. Lee, Z H. Lu


Extended x-ray absorption fine structure performed at the Ge-K edge has determined the Ge-Ge and Ge-Si bond lengths in a series of crystalline-Gel-x alloys (x [greater than/less than] 0.5) to be compositional dependent. This high-precision measurement was made possible by utilizing the experimentally determined Ge-Si atomic phase shift from the isoeletronic compounds A1As and GaP. Strain and departures from Vegard's law are also considered.
Physical Review B (Condensed Matter and Materials Physics)


extended x-ray absorption, Ge-K edge, Ge<sub>x</sub>Si<sub>1-x</sub> alloys, Vegard's law


Woicik, J. , Miyano, K. , King, C. , Johnson, R. , Pellegrino, J. , Lee, T. and Lu, Z. (2017), Phase-Correct Bond Lengths in Crystalline-Ge<sub>x</sub>Si<sub>l-x</sub> Alloys, Physical Review B (Condensed Matter and Materials Physics) (Accessed July 17, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created February 19, 2017