NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Phase-Correct Bond Lengths in Crystalline-GexSil-x Alloys
Published
Author(s)
Joseph Woicik, K E. Miyano, C A. King, R W. Johnson, J G. Pellegrino, T L. Lee, Z H. Lu
Abstract
Extended x-ray absorption fine structure performed at the Ge-K edge has determined the Ge-Ge and Ge-Si bond lengths in a series of crystalline-Gel-x alloys (x [greater than/less than] 0.5) to be compositional dependent. This high-precision measurement was made possible by utilizing the experimentally determined Ge-Si atomic phase shift from the isoeletronic compounds A1As and GaP. Strain and departures from Vegard's law are also considered.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
57
Pub Type
Journals
Keywords
extended x-ray absorption, Ge-K edge, Ge<sub>x</sub>Si<sub>1-x</sub> alloys, Vegard's law
Woicik, J.
, Miyano, K.
, King, C.
, Johnson, R.
, Pellegrino, J.
, Lee, T.
and Lu, Z.
(2017),
Phase-Correct Bond Lengths in Crystalline-Ge<sub>x</sub>Si<sub>l-x</sub> Alloys, Physical Review B (Condensed Matter and Materials Physics)
(Accessed October 10, 2025)