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Phase-Correct Bond Lengths in Crystalline-GexSil-x Alloys

Published

Author(s)

Joseph Woicik, K E. Miyano, C A. King, R W. Johnson, J G. Pellegrino, T L. Lee, Z H. Lu

Abstract

Extended x-ray absorption fine structure performed at the Ge-K edge has determined the Ge-Ge and Ge-Si bond lengths in a series of crystalline-Gel-x alloys (x [greater than/less than] 0.5) to be compositional dependent. This high-precision measurement was made possible by utilizing the experimentally determined Ge-Si atomic phase shift from the isoeletronic compounds A1As and GaP. Strain and departures from Vegard's law are also considered.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
57

Keywords

extended x-ray absorption, Ge-K edge, Ge<sub>x</sub>Si<sub>1-x</sub> alloys, Vegard's law

Citation

Woicik, J. , Miyano, K. , King, C. , Johnson, R. , Pellegrino, J. , Lee, T. and Lu, Z. (2017), Phase-Correct Bond Lengths in Crystalline-Ge<sub>x</sub>Si<sub>l-x</sub> Alloys, Physical Review B (Condensed Matter and Materials Physics) (Accessed February 25, 2024)
Created February 19, 2017