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Organic Semiconductor Structure and Chemistry From Near-Edge X-Ray Absorption Fine Structure (NEXAFS) Spectroscopy

Published

Author(s)

Dean M. DeLongchamp, Eric K. Lin, Daniel A. Fischer

Abstract

The ability to measure the structural development of organic semiconductor films and correlate it to the electrical characteristics of organic devices such as thin film transistors (OTFTs) is needed to facilitate the commercialization of this technology. Synchrotron-based Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy is a powerful tool that meets this need because it can non-destructively reveal both the structure and chemistry of thin organic films. The density of bonds involving Carbon, Nitrogen, Oxygen, and Fluorine can be quantified, a depth profile can be developed, and bond orientation can be determined.Here, we outline the principles of NEXAFS experimentation and data analysis with an emphasis on their application to organic semiconductor thin films. NEXAFS spectra of model organic semiconductors such as pentacene and poly(3-hexylthiophene) (P3HT) are used to demonstrate how NEXAFS can enhance understanding of the complex processing structure relationships of semiconductor film formation and identify processing methods that may optimize device performance.
Proceedings Title
Organic Field-Effect Transistors IV
Conference Dates
August 8-9, 2005
Conference Location
Sandiego, CA
Conference Title
Proceedings of SPIE--the International Society for Optical Engineering

Keywords

flexible electronics, NEXAFS, organic semiconductors, organic thin film transistor, P3HT, pentacene, poly(3-hexylthiophene), X-Ray absorption spectroscopy

Citation

DeLongchamp, D. , Lin, E. and Fischer, D. (2005), Organic Semiconductor Structure and Chemistry From Near-Edge X-Ray Absorption Fine Structure (NEXAFS) Spectroscopy, Organic Field-Effect Transistors IV, Sandiego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852528 (Accessed May 31, 2023)
Created August 1, 2005, Updated February 19, 2017