Optoelectronic Device Performance on Reduced Threading Dislocation Density GaAs/Si

Published

April 15, 2001

Author(s)

P. H. Taylor, W. A. Jesser, J. Bradshaw, M. Lara-Taysing, R. P. Leavitt, G. Simonis, W. Chang, W. W. Clark, Kristine A. Bertness

Abstract

A technique for the heteroepitaxy of GaAs/Si films having reduced threading dislocation density is presented. The important attribute of this technique is the suppression of three-dimensional Volmer-Weber island formation during initial deposition. This suppression is achieved by deposition of a stoichiometric GaAs buffer layer by a migration enhanced epitaxy technique on silicon at 348 K to a thickness greater than the 'monolithic thickness'h_m. Subsequent GaAs films deposited by conventional molecular beam epitaxy on buffer layers of thickness greater than the h_m possess structural and optical characteristics that exceed those for state-of-the-art GaAs/Si layers: an x-ray full width at half maximum (FWHM) of 110 arcsec with a dislocation density at the film surface of 3 x 10⁶ cm^-2 and a concomitant 4 K photoluminescence FWHM of 2.1 meV. The p-I-n structures suitable for use as light-emitting diodes (LEDs) that were grown on the reduced threading dislocation density GaAs/Si and by means of forward- and reverse-bias measurements, demonstrated an ideality factor of n=1.5, an increased reverse-bias breakdown electric field of 2.1x10⁷ V/m, and an intrinsic region resistivity of 4x10⁷ ohm} cm for LEDs of increasingly smaller mesa size.

Citation

Journal of Applied Physics

Volume

89

Issue

8

Pub Type

Journals

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Keywords

GaAs on silicon, migration enhanced epitaxy, molecular beam epitaxy, strained heteroepitaxy

Citation

Taylor, P. , Jesser, W. , Bradshaw, J. , Lara-Taysing, M. , Leavitt, R. , Simonis, G. , Chang, W. , Clark, W. and Bertness, K. (2001), Optoelectronic Device Performance on Reduced Threading Dislocation Density GaAs/Si, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=10812 (Accessed December 11, 2024)