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Optoelectronic Device Performance on Reduced Threading Dislocation Density GaAs/Si



P. H. Taylor, W. A. Jesser, J. Bradshaw, M. Lara-Taysing, R. P. Leavitt, G. Simonis, W. Chang, W. W. Clark, Kristine A. Bertness


A technique for the heteroepitaxy of GaAs/Si films having reduced threading dislocation density is presented. The important attribute of this technique is the suppression of three-dimensional Volmer-Weber island formation during initial deposition. This suppression is achieved by deposition of a stoichiometric GaAs buffer layer by a migration enhanced epitaxy technique on silicon at 348 K to a thickness greater than the 'monolithic thickness'hm. Subsequent GaAs films deposited by conventional molecular beam epitaxy on buffer layers of thickness greater than the hm possess structural and optical characteristics that exceed those for state-of-the-art GaAs/Si layers: an x-ray full width at half maximum (FWHM) of 110 arcsec with a dislocation density at the film surface of 3 x 106 cm-2 and a concomitant 4 K photoluminescence FWHM of 2.1 meV. The p-I-n structures suitable for use as light-emitting diodes (LEDs) that were grown on the reduced threading dislocation density GaAs/Si and by means of forward- and reverse-bias measurements, demonstrated an ideality factor of n=1.5, an increased reverse-bias breakdown electric field of 2.1x107 V/m, and an intrinsic region resistivity of 4x107 ohm} cm for LEDs of increasingly smaller mesa size.
Journal of Applied Physics


GaAs on silicon, migration enhanced epitaxy, molecular beam epitaxy, strained heteroepitaxy


Taylor, P. , Jesser, W. , Bradshaw, J. , Lara-Taysing, M. , Leavitt, R. , Simonis, G. , Chang, W. , Clark, W. and Bertness, K. (2001), Optoelectronic Device Performance on Reduced Threading Dislocation Density GaAs/Si, Journal of Applied Physics, [online], (Accessed May 30, 2024)


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Created April 14, 2001, Updated October 12, 2021