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PUBLICATIONS

Optical TSOM method for 3D interconnect metrology

Published

Author(s)

Ravikiran Attota

Abstract

There is a great need for high accurate, truly-3D metrology solutions that can be used for analysis of high aspect ratio features such as through-silicon-vias (TSVs). In this presentation we propose evaluating the viability of the newly developed through-focus scanning optical microscopy (TSOM- pronounced as "tee-som") method for dimensional analysis of TSVs.
Conference Dates
July 14, 2010
Conference Location
San Franscisco, CA
Conference Title
SEMATECH Workshop on 3D Interconnect Metrology
Pub Type
Conferences

Keywords

TSOM, TSV, 3D interconnects, Metrology, Optical microscopy, Nanometrology, Through focus scanning optical microscopy
Metrology, Nanotechnology and Nanometrology

Citation

Attota, R. (2009), Optical TSOM method for 3D interconnect metrology, SEMATECH Workshop on 3D Interconnect Metrology, San Franscisco, CA (Accessed May 30, 2023)

Created November 18, 2009, Updated February 19, 2017