Attota, R.
(2009),
Optical TSOM method for 3D interconnect metrology, SEMATECH Workshop on 3D Interconnect Metrology, San Franscisco, CA
(Accessed May 21, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Optical TSOM method for 3D interconnect metrology
Published
Author(s)
Abstract
There is a great need for high accurate, truly-3D metrology solutions that can be used for analysis of high aspect ratio features such as through-silicon-vias (TSVs). In this presentation we propose evaluating the viability of the newly developed through-focus scanning optical microscopy (TSOM- pronounced as "tee-som") method for dimensional analysis of TSVs.Conference Dates
July 14, 2010
Conference Location
San Franscisco, CA
Conference Title
SEMATECH Workshop on 3D Interconnect Metrology
Pub Type
Conferences
Keywords
TSOM, TSV, 3D interconnects, Metrology, Optical microscopy, Nanometrology, Through focus scanning optical microscopy
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created November 18, 2009, Updated February 19, 2017