Noise and THz rectification characteristics of zero-bias quantum tunneling Sb-heterostructure diodes .

Published

December 5, 2005

Author(s)

Arttu Luukanen, Erich N. Grossman

Abstract

The Sb-heterostructure quantum tunneling diode, fabricated from epitaxial layers of InAs and AIGaSb, is a recently proposed device for direct detection and mixing in the submillimeter wavelength range. These diodes exhibit especially high curvature in the current-voltage characteristic that produces the rectification or mixing without bias. Operation without bias is a highly desirable feature as the device does not suffer from large 1/f noise, a major shortcoming in other devices such as Schottky barrier diodes or resistive room temperature bolometers. In this paper we present the noise characteristics of the diode as a function of the bias voltage. At room temperature and zero bias, the device demonstrates a Johnson noise limited intrinsic noise equivalent power of 1 pW/rtHz. In addition to the noise measurements, we present the detection characteristics of the diode at a frequency of 2.5 THz. The measured THz laser response deviates from conventional theoretical prediction based on pure rectification. The reasons for the discrepancy will be discussed.

Citation

Intl. J. High Speed Electron. Syst.

Volume

14

Issue

3

Pub Type

Journals

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Keywords

backward diodes, millimeter wave diodes, noise

Citation

Luukanen, A. and Grossman, E. (2005), Noise and THz rectification characteristics of zero-bias quantum tunneling Sb-heterostructure diodes ., Intl. J. High Speed Electron. Syst., [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31910 (Accessed May 6, 2024)