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Multidimensional, Closed-Form Analytic Expressions for Mobilities in Ga1-xAlxAs Heterostructures



Herbert S. Bennett


A significant, practical challenge, which arises in developing computationally efficient physical models for use in computer simulations of microelectronic and optoelectronic devices (for example, transistors in digital cellular phones and in laser modulators, respectively), is to represent vast amounts of numerical data for transport properties in two or more dimensions in terms of closed form analytic expressions. In this paper, we use a methodology, which was presented in more detail previously, to achieve the above goal for a class of numerical data in a bounded two-dimensional space. We present here closed-form analytic expressions for the electron and hole mobilities at 300 K in p-type and n-type Ga1-xAlxAs as functions of dopant densities between 1016 cm-3 and 1020 cm-3 and mole fractions of AlAs x between 0.0 and 0.3.
Journal of Applied Physics


analytic expressions, dopant density, gallium aluminum arsenide, mobilities, mole fraction


Bennett, H. (2002), Multidimensional, Closed-Form Analytic Expressions for Mobilities in Ga<sub>1-x</sub>Al<sub>x</sub>As Heterostructures, Journal of Applied Physics (Accessed July 18, 2024)


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Created October 15, 2002, Updated January 27, 2020