Multi-Step Magnetic Switching in Single-Crystal (001) Co2MnGe Films

Published

April 23, 2002

Author(s)

F Y. Yang, C H. Shang, T Ambrose, J J. Krebs, G A. Prinz, Valerian I. Nikitenko, V S. Gornakov, Alexander J. Shapiro, Robert D. Shull, C L. Chien

Abstract

Multi-step magnetic switching with single, double, and triple loops has been observed in single-crystal (001) Co2MnGe Heusler alloy films epitaxially grown on GaAs (001) substrates due to a combined magnetic anisotropy consisting of cubic magnetocrystalline anisotropy and uniaxial anisotropy. Theoretical calculations of the hysteresis loops using coherent rotation show excellent agreement with the experimental results. Domain patterns and magnetization rotation in the Co2MnGe films have been studied using magneto-optical indicator film (MOIF) imaging technique. Magnetic domains and domain walls, as well as the coherent rotation of magnetization in single-step, double-step, and triple-step switching have been clearly observed. The magnetic switching field and domain wall pattern (90 and 180 domain walls) observed from the MOIF images are in excellent agreement with the results of the hysteresis measurements and the theoretical model.

Citation

Physical Review B (Condensed Matter and Materials Physics)

Volume

65

Issue

No. 17

Pub Type

Journals

Keywords

magnetic domain, Magneto-optical indicator film (MPIF), multi-step Magnetic Switching, single-crystal films

Citation

Yang, F. , Shang, C. , Ambrose, T. , Krebs, J. , Prinz, G. , Nikitenko, V. , Gornakov, V. , Shapiro, A. , Shull, R. and Chien, C. (2002), Multi-Step Magnetic Switching in Single-Crystal (001) Co₂MnGe Films, Physical Review B (Condensed Matter and Materials Physics) (Accessed January 19, 2025)