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MOS Device Characterization

Published

Author(s)

Eric M. Vogel, Veena Misra

Abstract

This chapter provides a survey and discussion of the electrical characterization techniques commonly used to determine the material, performance, and reliability properties of state-of-the-art metal-oxide-semiconductor (MOS) devices used in silicon semiconductor technology. The chapter is not intended as a comprehensive review of all electrical characterization techniques. Instead, the intent is to describe the electrical characterization techniques most common and directly relevant to fabricating and integrating high-performance, state-of-the-art MOS devices.
Citation
Handbook of Silicon Semiconductors Metrology
Publisher Info
,

Keywords

capacitance, current, electrical characterization, FET, MOS, reliability, silicon

Citation

Vogel, E. and Misra, V. (2001), MOS Device Characterization, , (Accessed April 20, 2024)
Created June 30, 2001, Updated October 12, 2021