Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

MOS Device Characterization



Eric M. Vogel, Veena Misra


This chapter provides a survey and discussion of the electrical characterization techniques commonly used to determine the material, performance, and reliability properties of state-of-the-art metal-oxide-semiconductor (MOS) devices used in silicon semiconductor technology. The chapter is not intended as a comprehensive review of all electrical characterization techniques. Instead, the intent is to describe the electrical characterization techniques most common and directly relevant to fabricating and integrating high-performance, state-of-the-art MOS devices.
Handbook of Silicon Semiconductors Metrology
Publisher Info


capacitance, current, electrical characterization, FET, MOS, reliability, silicon


Vogel, E. and Misra, V. (2001), MOS Device Characterization, , (Accessed April 20, 2024)
Created June 30, 2001, Updated October 12, 2021