Pappas, D.
, , F.
, Osminer, T.
, , S.
, Choi, H.
, Yang, C.
and Park, Y.
(2009),
Modification of magnetotransport properties across patterned GaMnAs nanoconstrictions by application of high current densities, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=901893
(Accessed May 5, 2024)
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Modification of magnetotransport properties across patterned GaMnAs nanoconstrictions by application of high current densities
Published
Author(s)
, , , Sung Un Cho, Hyung Choi, Chan Yang, Yun Park
Abstract
We report on the modification of magnetotransport properties across patterned GaMnAs nanoconstrictions by the application of high current densities (< 107 A/cm2). We observe controllable changes in the electrical resistance with the direction of the bias current. Repeated biases at high current densities increase the constriction resistance by 300%. Subsequent biasing and magnetotransport measurements show nearly a four-fold increase in the magnetoresistances and large changes in the magnetic switching behavior of GaMnAs. The observed changes cannot be explained solely on the basis of local annealing caused by Joule heating effects. The initial reversibility of the changes in resistance suggests that dopant electromigration may locally alter the interstitial concentrations of Mn at the nanoconstriction.Citation
Applied Physics Letters
Volume
95
Pub Type
Journals
Download Paper
Keywords
ferromagnetic semiconductor, nano-wires, GaMnAs, magnetotransport, nanoconstrictions
Citation
Created July 17, 2009, Updated February 17, 2017