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Modeling and metrology of metallic nanowires with application to microwave interconnects
Published
Author(s)
Kichul Kim, Thomas M. Wallis, Paul Rice, Chin J. Chiang, Atif A. Imtiaz, Pavel Kabos, Jintao Zhang
Abstract
Abstract: Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with microwire Au interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.
Kim, K.
, Wallis, T.
, Rice, P.
, Chiang, C.
, Imtiaz, A.
, Kabos, P.
and Zhang, J.
(2010),
Modeling and metrology of metallic nanowires with application to microwave interconnects, IEEE MTT-S International Microwave Symposium , Anaheim, CA, [online], https://doi.org/10.1109/MWSYM.2010.5518053
(Accessed October 10, 2025)