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Modeling and metrology of metallic nanowires with application to microwave interconnects

Published

Author(s)

Kichul Kim, Thomas M. Wallis, Paul Rice, Chin J. Chiang, Atif A. Imtiaz, Pavel Kabos, Jintao Zhang

Abstract

Abstract: Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with microwire Au interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.
Proceedings Title
IEEE MTT-S International Microwave Symposium
Conference Dates
May 23-28, 2010
Conference Location
Anaheim, CA

Keywords

Interconnects, nanowires, modeling, measurement, conductivity, contact impedance.

Citation

Kim, K. , Wallis, T. , Rice, P. , Chiang, C. , Imtiaz, A. , Kabos, P. and Zhang, J. (2010), Modeling and metrology of metallic nanowires with application to microwave interconnects, IEEE MTT-S International Microwave Symposium , Anaheim, CA, [online], https://doi.org/10.1109/MWSYM.2010.5518053 (Accessed April 15, 2024)
Created May 23, 2010, Updated November 10, 2018