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Microwave Power Handling in Engineered Yba2Cu3O^d6-δ Grain Boundaries

Published

Author(s)

Y. M. Habib, D. E. Oates, G. Dresselhaus, M. Dresselhaus, Leila R. Vale, Ronald H. Ono

Abstract

Microwave-frequency (rf) power-dependence measurements performed on thin-film Yba2Cu3O^d7-δ grain boundaries engineered on sapphire bicrystal substrates with misorientation angles of θ=20, 50, 100, and 240 are presented. The data are compared to measuremnets on films grown on single-crystal substrates. A stripline-resonator measurement technique is employed. The rf results are compared to dc measurements performed on a four-point test structure on the same substrate as the resonator. The measurements demonstrate that low-angle grain boundaries (θless then or equal to}100) have little effect on the rf power handling, while the high-angle grain boundaries (θ=240) cause large nonlinear losses due to Josephson vortices created by rf currents.
Citation
Applied Physics Letters
Volume
73
Issue
15

Keywords

grain boundary junctions, high temperature superconductors, microwave power dependence

Citation

Habib, Y. , Oates, D. , Dresselhaus, G. , Dresselhaus, M. , Vale, L. and Ono, R. (1998), Microwave Power Handling in Engineered Yba<sub>2</sub>Cu<sub>3</sub>O^d6-&#948; Grain Boundaries, Applied Physics Letters (Accessed April 20, 2024)
Created October 11, 1998, Updated October 12, 2021