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Microwave Power Handling in Engineered Yba2Cu3O^d6-δ Grain Boundaries



Y. M. Habib, D. E. Oates, G. Dresselhaus, M. Dresselhaus, Leila R. Vale, Ronald H. Ono


Microwave-frequency (rf) power-dependence measurements performed on thin-film Yba2Cu3O^d7-δ grain boundaries engineered on sapphire bicrystal substrates with misorientation angles of θ=20, 50, 100, and 240 are presented. The data are compared to measuremnets on films grown on single-crystal substrates. A stripline-resonator measurement technique is employed. The rf results are compared to dc measurements performed on a four-point test structure on the same substrate as the resonator. The measurements demonstrate that low-angle grain boundaries (θless then or equal to}100) have little effect on the rf power handling, while the high-angle grain boundaries (θ=240) cause large nonlinear losses due to Josephson vortices created by rf currents.
Applied Physics Letters


grain boundary junctions, high temperature superconductors, microwave power dependence


Habib, Y. , Oates, D. , Dresselhaus, G. , Dresselhaus, M. , Vale, L. and Ono, R. (1998), Microwave Power Handling in Engineered Yba<sub>2</sub>Cu<sub>3</sub>O^d6-&#948; Grain Boundaries, Applied Physics Letters (Accessed April 20, 2024)
Created October 11, 1998, Updated October 12, 2021