Microwave Power Handling in Engineered Yba2Cu3O^d6-δ Grain Boundaries

Published

October 12, 1998

Author(s)

Y. M. Habib, D. E. Oates, G. Dresselhaus, M. Dresselhaus, Leila R. Vale, Ronald H. Ono

Abstract

Microwave-frequency (rf) power-dependence measurements performed on thin-film Yba₂Cu₃O^d7-δ grain boundaries engineered on sapphire bicrystal substrates with misorientation angles of θ=20, 50, 100, and 240 are presented. The data are compared to measuremnets on films grown on single-crystal substrates. A stripline-resonator measurement technique is employed. The rf results are compared to dc measurements performed on a four-point test structure on the same substrate as the resonator. The measurements demonstrate that low-angle grain boundaries (θless then or equal to}100) have little effect on the rf power handling, while the high-angle grain boundaries (θ=240) cause large nonlinear losses due to Josephson vortices created by rf currents.

Citation

Applied Physics Letters

Volume

73

Issue

15

Pub Type

Journals

Keywords

grain boundary junctions, high temperature superconductors, microwave power dependence

Citation

Habib, Y. , Oates, D. , Dresselhaus, G. , Dresselhaus, M. , Vale, L. and Ono, R. (1998), Microwave Power Handling in Engineered Yba₂Cu₃O^d6-δ Grain Boundaries, Applied Physics Letters (Accessed October 10, 2025)