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Microwave near-field probes for photovoltaic applications



Joel C. Weber


The photoresponse of three different photovoltaic Cu(In, Ga)Se2 (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values for bulk samples, as well as a preliminary understanding of more complicated multilayer photovoltaics. The spectral dependence of CIGS samples is probed at 405, 635, 808 and 980 nm wavelengths. In addition, we present two-dimensional raster scans that may reveal grain-boundary effects under illumination.
Proceedings Title
37th IEEE Photovoltaic Specialists Conference
Conference Dates
June 19-24, 2011
Conference Location
Seattle, WA


microwave scanning probes, near-field scanning microwave microscopy, photovoltaic materials, radio- frequency scanning tunneling microscopy, solar cell, CIGS, GaAs


Weber, J. (2011), Microwave near-field probes for photovoltaic applications, 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, [online], (Accessed April 21, 2024)
Created June 19, 2011, Updated November 10, 2018