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Microwave near-field probes for photovoltaic applications

Published

Author(s)

Joel C. Weber

Abstract

The photoresponse of three different photovoltaic Cu(In, Ga)Se2 (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values for bulk samples, as well as a preliminary understanding of more complicated multilayer photovoltaics. The spectral dependence of CIGS samples is probed at 405, 635, 808 and 980 nm wavelengths. In addition, we present two-dimensional raster scans that may reveal grain-boundary effects under illumination.
Proceedings Title
37th IEEE Photovoltaic Specialists Conference
Conference Dates
June 19-24, 2011
Conference Location
Seattle, WA

Keywords

microwave scanning probes, near-field scanning microwave microscopy, photovoltaic materials, radio- frequency scanning tunneling microscopy, solar cell, CIGS, GaAs

Citation

Weber, J. (2011), Microwave near-field probes for photovoltaic applications, 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, [online], https://doi.org/10.1109/PVSC.2011.6186341 (Accessed June 24, 2021)
Created June 19, 2011, Updated November 10, 2018