NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Mg/GaAs(001): A Highly Anisotropic Reaction Morphology

Published

Author(s)

Steven W. Robey

Abstract

The spontaneous growth of one-dimensional structures during reaction of Mg on GaAs(001) 4x2 Ga-stabilized surface was observed by in situ electron diffraction and ex situ atomic force microscopy (AFM). Reaction led to growth of an epitaxial, cubic phase with a lattice constant of 0.62+/-0.02 nm. Atomic force microscopy revealed structures elongated along [110]. We propose a mechanism for the formation of these features by migration of Ga or Ga-rich droplets that enhance the reaction of Mg with GaAs to form a ridge of Mg3As2 with alignment along [110] due either to strain or chemical anisotropy.
Citation
Applied Physics Letters
Volume
75
Pub Type
Journals

Keywords

GaAs(001), Mg, reaction vapor-liquid solid, thin films, VLS

Citation

Robey, S. (1999), Mg/GaAs(001): A Highly Anisotropic Reaction Morphology, Applied Physics Letters (Accessed October 17, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 31, 1999, Updated February 17, 2017
Was this page helpful?