Robey, S.
(1999),
Mg/GaAs(001): A Highly Anisotropic Reaction Morphology, Applied Physics Letters
(Accessed December 13, 2024)
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Mg/GaAs(001): A Highly Anisotropic Reaction Morphology
Published
Author(s)
Abstract
The spontaneous growth of one-dimensional structures during reaction of Mg on GaAs(001) 4x2 Ga-stabilized surface was observed by in situ electron diffraction and ex situ atomic force microscopy (AFM). Reaction led to growth of an epitaxial, cubic phase with a lattice constant of 0.62+/-0.02 nm. Atomic force microscopy revealed structures elongated along [110]. We propose a mechanism for the formation of these features by migration of Ga or Ga-rich droplets that enhance the reaction of Mg with GaAs to form a ridge of Mg3As2 with alignment along [110] due either to strain or chemical anisotropy.Citation
Applied Physics Letters
Volume
75
Pub Type
Journals
Keywords
GaAs(001), Mg, reaction vapor-liquid solid, thin films, VLS
Citation
Issues
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Created December 31, 1999, Updated February 17, 2017