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PUBLICATIONS

Metal-Insulator-Semiconductor Transmission Line Model

Published

Author(s)

Dylan F. Williams

Abstract

This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.
Proceedings Title
Tech Dig., Auto. RF Tech. Group Conf.
Volume
33
Conference Dates
June 7-12, 1998
Conference Location
Baltimore, MD
Pub Type
Conferences

Download Paper

https://doi.org/10.1109/ARFTG.1998.327280

Citation

Williams, D. (1998), Metal-Insulator-Semiconductor Transmission Line Model, Tech Dig., Auto. RF Tech. Group Conf., Baltimore, MD, [online], https://doi.org/10.1109/ARFTG.1998.327280 (Accessed April 19, 2024)

Created June 1, 1998, Updated November 10, 2018