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Magnetoelectronic Devices Using α-Fe2O3 Bottom GMR Spin-Valves

Published

Author(s)

S Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, L Sheppard, E J. Torok, J H. Judy

Abstract

The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using α-Fe2O3 bottom GMR spin-valves. Patterned α-Fe2O3 bottom GMR spin-valve devices exhibited excellent device performance, which is related to the high GMR ratio, high initial device resistivity, and good magnetic properties. The magnetic and electrical device testing results of MRAM and transpinnor suggest that they are potential candidates in high-density memories. The possibility of fabricating both an operating device (transpinnor) for the MRAM and a MRAM memory element on the same substrate offers the potential of reducing the real MRAM cell size.
Citation
IEEE Transactions on Magnetics
Volume
37
Issue
No. 4

Keywords

access memory, giant magnetoresistance, GMR spin-valves, magnetoresistive random, spin-valves

Citation

Bae, S. , Zurn, S. , Egelhoff Jr., W. , Chen, P. , Sheppard, L. , Torok, E. and Judy, J. (2001), Magnetoelectronic Devices Using &#945;-Fe<sub>2</sub>O<sub>3</sub> Bottom GMR Spin-Valves, IEEE Transactions on Magnetics (Accessed May 18, 2024)

Issues

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Created June 30, 2001, Updated October 12, 2021