Magnetoelectronic Devices Using α-Fe2O3 Bottom GMR Spin-Valves

Published

July 1, 2001

Author(s)

S Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, L Sheppard, E J. Torok, J H. Judy

Abstract

The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using α-Fe₂O₃ bottom GMR spin-valves. Patterned α-Fe₂O₃ bottom GMR spin-valve devices exhibited excellent device performance, which is related to the high GMR ratio, high initial device resistivity, and good magnetic properties. The magnetic and electrical device testing results of MRAM and transpinnor suggest that they are potential candidates in high-density memories. The possibility of fabricating both an operating device (transpinnor) for the MRAM and a MRAM memory element on the same substrate offers the potential of reducing the real MRAM cell size.

Citation

IEEE Transactions on Magnetics

Volume

37

Issue

No. 4

Pub Type

Journals

Keywords

access memory, giant magnetoresistance, GMR spin-valves, magnetoresistive random, spin-valves

Citation

Bae, S. , Zurn, S. , Egelhoff Jr., W. , Chen, P. , Sheppard, L. , Torok, E. and Judy, J. (2001), Magnetoelectronic Devices Using α-Fe₂O₃ Bottom GMR Spin-Valves, IEEE Transactions on Magnetics (Accessed October 16, 2025)