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Magnetization and Antiferromagnetic Coupling of the Interface between a 20 nm Y3Fe5O12 Film and Gd3Ga5O12 Substrate



M. J. Roos, Patrick Quarterman, Jinjun Ding, Mingzhong Wu, Brian Kirby, B. L. Zink


We present evidence for and characterization of a ≈ 4 nm thick (Y1−xGdx)3Fe5O12 layer with x ≥ 0.4 formed at the interface between a gadolinium gallium garnet (GGG) substrate and a sputtered Y3Fe5O12 (YIG) epitaxial film with nominal thickness of 20 nm. Polarized neutron reflectometry (PNR) and quantitative superconducting quantum interference device (SQUID) magnetometry as a function of T show antiferromagnetic alignment of this interfacial layer with the bulk of the YIG film at low T that persists to at least 3 tesla. Both experiments also show that this interfacial alignment switches from antiferromagnetic to ferromagnetic between 100 − 200 K in small applied magnetic fields. Simple modeling suggests correlation of this crossover with the ferrimagnetic compensation point of the mixed garnet that forms this interfacial layer.
Physical Review Materials




Roos, M. , Quarterman, P. , Ding, J. , Wu, M. , Kirby, B. and Zink, B. (2022), Magnetization and Antiferromagnetic Coupling of the Interface between a 20 nm Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> Film and Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> Substrate, Physical Review Materials (Accessed April 18, 2024)
Created March 8, 2022, Updated November 29, 2022