Magnetization and Antiferromagnetic Coupling of the Interface between a 20 nm Y3Fe5O12 Film and Gd3Ga5O12 Substrate

Published

March 9, 2022

Author(s)

M. J. Roos, Patrick Quarterman, Jinjun Ding, Mingzhong Wu, Brian Kirby, B. L. Zink

Abstract

We present evidence for and characterization of a ≈ 4 nm thick (Y1−xGdx)3Fe5O12 layer with x ≥ 0.4 formed at the interface between a gadolinium gallium garnet (GGG) substrate and a sputtered Y3Fe5O12 (YIG) epitaxial film with nominal thickness of 20 nm. Polarized neutron reflectometry (PNR) and quantitative superconducting quantum interference device (SQUID) magnetometry as a function of T show antiferromagnetic alignment of this interfacial layer with the bulk of the YIG film at low T that persists to at least 3 tesla. Both experiments also show that this interfacial alignment switches from antiferromagnetic to ferromagnetic between 100 − 200 K in small applied magnetic fields. Simple modeling suggests correlation of this crossover with the ferrimagnetic compensation point of the mixed garnet that forms this interfacial layer.

Citation

Physical Review Materials

Volume

6

Issue

3

Pub Type

Journals

Keywords

neutron

Citation

Roos, M. , Quarterman, P. , Ding, J. , Wu, M. , Kirby, B. and Zink, B. (2022), Magnetization and Antiferromagnetic Coupling of the Interface between a 20 nm Y₃Fe₅O₁₂ Film and Gd₃Ga₅O₁₂ Substrate, Physical Review Materials (Accessed September 14, 2024)