Wang, W.
and Richter, C.
(2009),
Magnetic Tunnel Junctions with Self-Assembled Molecules, Journal of Nanoscience and Nanotechnology, Beijing, 1, CH
(Accessed April 26, 2024)
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Magnetic Tunnel Junctions with Self-Assembled Molecules
Published
Author(s)
,
Abstract
Molecular electronic devices with spin-dependent tunneling (SDT) transport behavior offer an innovative and extremely enticing direction towards spin electronics, both from fundamental and technological points of view. In this work, such molecular magnetic tunnel junctions are fabricated and inelastic electron tunneling spectroscopy (IETS) provides the unambiguous experimental evidence of the existence of molecular species in the devices. Tunneling spectroscopy are also used to investigate the spin-polarized inelastic tunneling processes in the molecular device for the first time, and show that inelastic scattering due to molecular vibrations, instead of magnon excitations, is likely the main cause of the observed JMR bias-dependence.Proceedings Title
Journal of Nanoscience and Nanotechnology
Volume
9
Issue
4
Conference Dates
June 3-7, 2007
Conference Location
Beijing, 1, CH
Conference Title
International Conference on Nanoscience & Technology, China 2007
Pub Type
Conferences
Keywords
self-assmbled monolayer, spintronics, tunneling magnetoresistance
Citation
Created February 4, 2009, Updated October 12, 2021