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Magnetic Random Access Memory

Published

Author(s)

Michael L. Schneider, P. G. Mather

Abstract

Magnetic Random Access Memory (MRAM) possesses a unique combination of attributes that provide considerable benefits over those available with conventional memory technology. Here we discuss the state-of-the-art of MRAM, from parts currently in production to development efforts underway. A promising future for MRAM is emerging as new write techniques for even higher-density and lower-power modes of operation are developed and optimized. While high density is highly desirable in any data-storage medium, MRAM differentiates itself from the magnetic data storage discussed in this chapter, since the primary focus is operation as a high-speed RAM with fast read and write times and extremely reliable performance coupled with nonvolatility that the magnetic nature of the storage element provides. MRAM provides a nonvolatile high-speed memory array that can be paired directly with a microprocessor, rather than a system for storing extensive volumes of information.
Citation
Reference Module in Materials Science and Materials Engineering
Volume
5
Publisher Info
Elsevier, Kidlington, -1

Keywords

Magnetic Random Access Memory, MRAM, magnetic materials, materials science, spintronics, magnetic data storage, reliable performance, high-speed memory, microprocessor

Citation

Schneider, M. and Mather, P. (2016), Magnetic Random Access Memory, Elsevier, Kidlington, -1, [online], https://doi.org/10.1016/B978-0-12-803581-8.10098-0 (Accessed June 20, 2024)

Issues

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Created August 4, 2016, Updated July 10, 2020