Low-temperature Growth of GMR Spin Valves

Published

January 1, 1996

Author(s)

William F. Egelhoff Jr., R Misra, T Ha, Y Kadmon, Cedric J. Powell, Mark D. Stiles, Robert McMichael, Lawrence H. Bennett, C Lin, J Sivertsen, J Judy

Abstract

We have investigated the dependence of the giant magnetoresistance (GMR) effect, the coercivity, the coupling field, and the resistivity on film deposition at low-substrate temperatures (150 K) in spin valve multilayers of the general type: FeMn/Ni₈₀Fe₂₀/Co/Cu/Co/Ni₈₀Fe₂₀/glass. Low substrate temperatures tend to suppress both thermally activated surface diffusion of deposited atoms and interdiffusion at interfaces, which often occur during thin-film deposition at room temperature. We find significant increases in the GMR, significant reductions in the magnetic coupling across the Cu layer, slight reductions in the coercivity of the unpinned film, and slight reductions in the resistivity depending on which parts of the multilayer are deposited at low temperature. When the entire film is deposited at 150 K we obtain a GMR of 8.8% at a coercivity of less than 0.5 mT (5 Oe).

Citation

Journal of Applied Physics

Volume

79

Issue

1

Pub Type

Journals

Citation

Egelhoff Jr., W. , Misra, R. , Ha, T. , Kadmon, Y. , Powell, C. , Stiles, M. , McMichael, R. , Bennett, L. , Lin, C. , Sivertsen, J. and Judy, J. (1996), Low-temperature Growth of GMR Spin Valves, Journal of Applied Physics (Accessed October 10, 2024)