Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Kinetics Studies of the Interfacial Reactions of the Ba2Ycu3O6+x Superconductor With CeO2 Buffer



Lawrence P. Cook, Winnie K. Wong-Ng, Z Yang, Peter K. Schenck, Igor Levin, Julia Frank


Interfacial reactions between the Ba2YCu3O6+x superconductor and the CeO2 buffer layer employed in coated conductors have been modeled experimentally by investigating the kinetics of the reaction between Ba2YCu3O6+x and CeO2. At 810 C and pO2 = 100 Pa, the Ba2YCu3O6+x - CeO2 join within the BaO-Y2O3-CeO2-CuOx quaternary system is non-binary. At a mole ratio of Ba2YCu3O6+x : CeO2 = 40 : 60, a phase boundary was found to separate two four-phase regions. On the Ba2YCu3O6+x-rich side of the join, the four-phase region consists of Ba2YCu3O6+x, Ba(Ce1-zYz)O3-x, BaY2CuO5, and Cu2O; on the CeO2 rich side, the four phases were determined to be Ba(Ce1-zYz)O3-x, BaY2CuO5, Cu2O and CeO2. The Ba2YCu3O6+x /CeO2 reaction is limited by solid-state diffusion, and the reaction kinetics obeys the parabolic rule, x = Kt1/2 (where x is thickness of the reaction layer, t is time, and K is a constant related to the rate constant); K was determined to be 1.2 x 10 2 mm/min1/2 at 790 C and 3.6 x 10 2 mm/min1/2 at 830 C. The activation energy for the reaction was determined to be Eact = 2.44 x 105 J/mol using the Arrhenius Equation.
Journal of Electronic Materials


coated conductor, interfacial reaction of CeO<sub>2</sub>, kinetics of reaction, solid-state diffusion


Cook, L. , Wong-Ng, W. , Yang, Z. , Schenck, P. , Levin, I. and Frank, J. (2007), Kinetics Studies of the Interfacial Reactions of the Ba<sub>2</sub>Ycu<sub>3</sub>O<sub>6+x</sub> Superconductor With CeO<sub>2</sub> Buffer, Journal of Electronic Materials (Accessed June 12, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created October 16, 2007, Updated February 19, 2017