Regan, R.
, Atwater, H.
, Guyer, J.
, Meserole, E.
and Gorrsky, M.
(2006),
Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys., Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853551
(Accessed April 19, 2024)
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Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys.
Published
Author(s)
Regina Regan, Harry A. Atwater, , Erik Meserole, Mark S. Gorrsky
Abstract
We have studied the dynamic phenomenon of SnxGe1a 'x/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates.Phase-separation leads to the formation of direct bandgap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed SiYGe-1-y/Ge(001) virtual substrates. The experimental results are compared with a kinetic linear instability model and the experimental results show good agreement with this theoretical model for phase separation during dynamic growth.Citation
Physical Review B (Condensed Matter and Materials Physics)
Pub Type
Journals
Download Paper
Keywords
Asaro-Tiller, decomposition, solute expansion, Stranski-Krastanov
Citation
Created June 4, 2006, Updated October 12, 2021