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Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys.

Published

Author(s)

Regina Regan, Harry A. Atwater, Jonathan E. Guyer, Erik Meserole, Mark S. Gorrsky

Abstract

We have studied the dynamic phenomenon of SnxGe1a 'x/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates.Phase-separation leads to the formation of direct bandgap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed SiYGe-1-y/Ge(001) virtual substrates. The experimental results are compared with a kinetic linear instability model and the experimental results show good agreement with this theoretical model for phase separation during dynamic growth.
Citation
Physical Review B (Condensed Matter and Materials Physics)

Keywords

Asaro-Tiller, decomposition, solute expansion, Stranski-Krastanov

Citation

Regan, R. , Atwater, H. , Guyer, J. , Meserole, E. and Gorrsky, M. (2006), Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys., Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853551 (Accessed October 26, 2021)
Created June 4, 2006, Updated October 12, 2021