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PUBLICATIONS

Just How Perfect Can a Perfect Crystal Be?

Published

Author(s)

R Deslattes, Ernest G. Kessler, S M. Owens, David R. Black, Albert Henins

Abstract

This overview addresses certain aspects of the perfection of the current generation of commercially manufactured silicon, specifically lattice uniformity and the more complex issues of interstitials, vacancies, and chemical impurities. The application areas considered are (gamma-ray spectroscopy), and the x-ray/crystal density approach to determination of the Avogadro constant. Some current imperfections for which we show evidence appear addressable by technical improvements in the production process, have a much larger effect than is expected from intrinsic limitations emerging from recent model calculations.
Citation
Journal of Physics D-Applied Physics
Volume
32
Pub Type
Journals

Keywords

crystal perfection, kilogram, silicon crystal, topography, x-ray diffraction

Citation

Deslattes, R. , Kessler, E. , Owens, S. , Black, D. and Henins, A. (1999), Just How Perfect Can a Perfect Crystal Be?, Journal of Physics D-Applied Physics (Accessed May 10, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 1, 1999, Updated February 17, 2017