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Just How Perfect Can a Perfect Crystal Be?



R Deslattes, Ernest G. Kessler, S M. Owens, David R. Black, Albert Henins


This overview addresses certain aspects of the perfection of the current generation of commercially manufactured silicon, specifically lattice uniformity and the more complex issues of interstitials, vacancies, and chemical impurities. The application areas considered are (gamma-ray spectroscopy), and the x-ray/crystal density approach to determination of the Avogadro constant. Some current imperfections for which we show evidence appear addressable by technical improvements in the production process, have a much larger effect than is expected from intrinsic limitations emerging from recent model calculations.
Journal of Physics D-Applied Physics


crystal perfection, kilogram, silicon crystal, topography, x-ray diffraction


Deslattes, R. , Kessler, E. , Owens, S. , Black, D. and Henins, A. (1999), Just How Perfect Can a Perfect Crystal Be?, Journal of Physics D-Applied Physics (Accessed June 23, 2024)


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Created June 1, 1999, Updated February 17, 2017