Hockey, B.
, Park, D.
, Kim, H.
and Lee, S.
(2017),
Interfacial Dewetting in Silicon Nitride Containing Aligned Grains, Science
(Accessed October 10, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Interfacial Dewetting in Silicon Nitride Containing Aligned Grains
Published
Author(s)
, D S. Park, H D. Kim,
Abstract
It is generally believed that liquid phase sintering of silicon nitride invariably results in a continuous intergranular phase such that individual grains are separated by a glassy interphase, typically as thin as I nm. To the contrary, results presented here show that when the relative misorientation between adjacent grains is small, interfacial dewetting occurs and the grains are directly joined by a low-angle dislocation boundary. The occurrence of interfacial dewetting is discussed in terms of the minimization of interfacial energy and is identified as an integral process in the lateral growth of grains and the microstructural development of liquid phase sintered silicon nitrides containing prealigned Β-Si3N4 whiskers.Citation
Science
Pub Type
Journals
Keywords
interfacial dewetting, SEM, silicon nitride, TEM
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created February 19, 2017