Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions

Published

April 19, 2006

Author(s)

Curt A. Richter, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, John S. Suehle, Eric M. Vogel

Abstract

We present a correlation of the results of dc-current-voltage (IV) and ac-capacitance-voltage (CV) measurements with vibrational spectroscopy of Au/monolayer/SiO2/Si structures to establish an improved understanding of the interactions at the buried metal/ monolayer and dielectric/silicon interfaces. A novel backside-incidence Fourier-transform infrared-spectroscopy technique was used to characterize the interaction of the top-metallization with the organic monolayers. Both the spectroscopic and electrical results indicate that Au has a minimal interaction with alkane monolayers deposited on SiO2 via silane chemistry. An intriguing negative-differential-resistance and hysteresis is observed in the IV measurements of Au/alkane/SiO2/Si devices. It is unlikely that this behavior is intrinsic to the simple alkane monolayers in these structures. We attribute the observed IV features to charge trapping and detrapping at both the alkane/SiO2 and the Si/SiO2 interfaces.

Citation

Solid State Electronics

Volume

50

Pub Type

Journals

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Keywords

capacitance-voltage, current-voltage, FTIR, interface traps, molecular electronics, negative-differential resistance

Citation

Richter, C. , Hacker, C. , Richter, L. , Kirillov, O. , Suehle, J. and Vogel, E. (2006), Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions, Solid State Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32175 (Accessed May 10, 2024)