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Inter-Laboratory Comparison of CMOS Distortion Measurements
Published
Author(s)
Catherine A. Remley, Joe Gering, Susan L. Sweeney, C. Michael Olsen, Cliff Xie, Dave K. Walker, Tom McKay, John J. Pekarik
Abstract
We describe an interlaboratory measurement comparison of distortion in a CMOS low-noise device operating under weakly nonlinear conditions. Issues that commonly arise in performing and interpreting nonlinear measurements are discussed, such as power vs. wave-based representations and the effects of embedding impedance on intermodulation distortion. We demonstrate that the increased confidence provided by a measurement comparison can help to diagnose issues with a device model that was initially derived from DC I/V curves and their derivatives and then compared to RF measurement.
Remley, C.
, Gering, J.
, Sweeney, S.
, , C.
, Xie, C.
, Walker, D.
, McKay, T.
and Pekarik, J.
(2007),
Inter-Laboratory Comparison of CMOS Distortion Measurements, ARFTG Microwave Measurement Conference Digest, Honolulu, HI, [online], https://doi.org/10.1109/ARFTG.2007.5456347
(Accessed October 8, 2025)