Inter-Laboratory Comparison of CMOS Distortion Measurements

Published

June 8, 2007

Author(s)

Catherine A. Remley, Joe Gering, Susan L. Sweeney, C. Michael Olsen, Cliff Xie, Dave K. Walker, Tom McKay, John J. Pekarik

Abstract

We describe an interlaboratory measurement comparison of distortion in a CMOS low-noise device operating under weakly nonlinear conditions. Issues that commonly arise in performing and interpreting nonlinear measurements are discussed, such as power vs. wave-based representations and the effects of embedding impedance on intermodulation distortion. We demonstrate that the increased confidence provided by a measurement comparison can help to diagnose issues with a device model that was initially derived from DC I/V curves and their derivatives and then compared to RF measurement.

Proceedings Title

ARFTG Microwave Measurement Conference Digest

Conference Dates

June 8, 2007

Conference Location

Honolulu, HI

Conference Title

ARFTG Microwave Measurement Conference

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/ARFTG.2007.5456347

Keywords

CMOS device, large-signal network analyzer, load-pull system, low noise amplifier, measurement comparison, measurement-based modeling, nonlinear measurements, wireless systems

Citation

Remley, C. , Gering, J. , Sweeney, S. , , C. , Xie, C. , Walker, D. , McKay, T. and Pekarik, J. (2007), Inter-Laboratory Comparison of CMOS Distortion Measurements, ARFTG Microwave Measurement Conference Digest, Honolulu, HI, [online], https://doi.org/10.1109/ARFTG.2007.5456347 (Accessed January 19, 2025)