Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si3N4 quantum photonic circuits

Published

August 30, 2019

Author(s)

Peter Schnauber, Anshuman Singh, Johannes Schall, Suk I. Park, Jin Dong Song, Sven Rodt, Kartik Srinivasan, Stephan Reitzenstein, Marcelo I. Davanco

Abstract

Silicon photonics enables the integration of multi-functional quantum networks on a chip. Inclusion of quantum emitters acting as on-demand single-photon source or photon non-linearity is highly desirable to boost scalability and functionality. Towards this goal, we use low-temperature in-situ electron-beam lithography to demonstrate hybrid GaAs/Si3N4 integrated photonic devices with single, deterministically positioned InAs quantum dots that act as triggered, Si3N4 waveguide-coupled single-photon sources. The precise alignment given by our scalable, top-down fabrication method minimizes the detrimental influence of surfaces upon quantum dot coherence, allowing us to observe post-selected indistinguishable photons. Our fabrication approach shows great potential for highly functional quantum optical circuits based on deterministically integrated quantum emitters on silicon photonic chips.

Citation

Nano Letters

Volume

19

Issue

10

Pub Type

Journals

Download Paper

https://doi.org/10.1021/acs.nanolett.9b02758

Local Download

Keywords

Quantum Dots, Integrated Quantum Photonics, Heterogeneous Integration

Citation

Schnauber, P. , Singh, A. , Schall, J. , Park, S. , Song, J. , Rodt, S. , Srinivasan, K. , Reitzenstein, S. and Davanco, M. (2019), Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si3N4 quantum photonic circuits, Nano Letters, [online], https://doi.org/10.1021/acs.nanolett.9b02758, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=927946 (Accessed April 25, 2024)