Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Improved Interfaces and Magnetic Properties in Spin Valves Using Ni80Fe20 Seed Layer

Published

Author(s)

E J. Repetski, D X. Yang, H D. Chopra, P J. Chen, William F. Egelhoff Jr.

Abstract

The giant magnetoresistance (GMR) (Ni80Fe20)O-Co-Cu based top spin valves were studied with and without Ni80Fe20 as a seed layer. Microstructure examination shows that without the seed layer, the free and the pinned Co layers of the spin valves are highly irregular, discontinuous, and connected by pinholes across the Cu spacer layer, resulting I a large coupling >5.96 kA/m (>75 Oe) and a negligible GMR effect (<0.7%). The presence of Ni80Fe20 seed layer leads to continuous layers without pinholes and smooth interfaces in the (Ni80Fe20) O-Co-Cu, thereby essentially eliminating the coupling between the free and the pinned layers 0.23 kA/m (or 2.9 Oe), a more than 25-fold reduction with respect to the seedless spin valves. Reduced detrimental coupling results in more than an order of magnitude increase in GMR (8.5 %) in the NiFe seed layer spin valves. Domain studies confirm that the pinned and the free layers in seedless spin valves reverse their magnetization in an overlapping field range, and independently in spin valves deposited in the presence of a seed layer.
Citation
Journal of Applied Physics
Volume
91
Issue
No. 6

Keywords

domain study, giant magnetoresistance (GMR), interfaces, spinvalves

Citation

Repetski, E. , Yang, D. , Chopra, H. , Chen, P. and Egelhoff Jr., W. (2002), Improved Interfaces and Magnetic Properties in Spin Valves Using Ni<sub>80</sub>Fe<sub>20</sub> Seed Layer, Journal of Applied Physics (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 28, 2002, Updated October 12, 2021