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Hydrogenated amorphous silcon germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique



B P. Nelson, Y Xu, D L. Williamsons, B von Roedern, A Mason, S Heck, A. H. Mahan, S F. Schmitt, Alan Gallagher, J Webb, R C. Reedy


We successfully grow high quality hydrogenated amorphous-silicon germanium alloys(a: SiGe:II) by the hot-wire chemical vapor deposition (HWCVD) technique using silane and germane gas mixtures. These alloys display electronic properties as good as those grown by (the plasma-enhanced chemical-vapor deposition (PECVD) technique, when comparing materials with)thesame optical bandgaps. However, we grow materials with good electrical properties at high desposition rates-up to 40 /s compared to 1-4 /s for PECVD materials. Our alloys exhibit similar trends with increasing Ge content to alloys grown by PECVD. The defect density, the dark conductivity, and the degree of nanostructural heterogeneity (as measured by small-angle X-ray scattering) all increase with increasing germanium content in the alloy. The nanostructural heterogencity displays a sharp transition between 9 at % and 14 at % germanium. PECVD-grown a SiGe: II alloys exhibit a similar transition at 20 at % Ge. The photoconductivity and the ambipolar diffusion length of the alloys decrease with increasing germanium content. For a fixed silane-to-germane gas ratio, all material properties improve substantially when increasing substrate temperature (Tsub) from 220 C to 375C . Increasing T ^sub^ also narrows the optical bandgap and lowers the hydrogen content in the alloys for the same germane-to-silane gas ratio.
Journal of the Materials Research Society


hot-wire chemical-vapor deposition (HWCV, hydrogenated amorphous-silicon-germanium, optical bandgap


Nelson, B. , Xu, Y. , Williamsons, D. , von, B. , Mason, A. , Heck, S. , Mahan, A. , Schmitt, S. , Gallagher, A. , Webb, J. and Reedy, R. (2000), Hydrogenated amorphous silcon germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique, Journal of the Materials Research Society (Accessed February 24, 2024)
Created April 1, 2000, Updated February 17, 2017