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Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment



Wei Li, Christina A. Hacker, Guangjun Cheng, Angela R. Hight Walker, Curt A. Richter, David J. Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng


Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices which were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.
Journal of Applied Physics


graphene, metal/graphene contact, residue


Li, W. , Hacker, C. , Cheng, G. , Hight, A. , Richter, C. , Gundlach, D. , Liang, Y. , Tian, B. , Liang, X. and Peng, L. (2014), Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment, Journal of Applied Physics (Accessed April 12, 2024)
Created March 17, 2014, Updated February 19, 2017