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High-Q GaN nanowire resonators and oscillators

Published

Author(s)

Shawn M. Tanner, Jason M. Gray, Charles T. Rogers, Kristine A. Bertness, Norman Sanford

Abstract

We report high mechanical quality factors Q for GaN nanowire cantilevers grown by molecular beam epitaxy. Nanowires with 30-500 nm diameters and 5-20 υm lengths having resonance frequencies from 400 kHz to 2.8 MHz were measured. Q near room temperature and 10-4 Pa ranged from 2,700 to above 60,000 with most above 10,000. Positive feedback to a piezoelectric stack caused spontaneous nanowire oscillations with Q exceeding 106. Spontaneous oscillations also occured with direct e-beam excitation of unintentionally doped nanowires. Doped nanowires showed no oscillations, consistent with oscillation arising via direct actuation of piezoelectric GaN.
Citation
Applied Physics Letters
Volume
91
Issue
203117

Keywords

GaN, mechanical oscillators, nanowire

Citation

Tanner, S. , Gray, J. , Rogers, C. , Bertness, K. and Sanford, N. (2007), High-Q GaN nanowire resonators and oscillators, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32729 (Accessed May 17, 2022)
Created November 15, 2007, Updated October 12, 2021