Shawn M. Tanner, Jason M. Gray, Charles T. Rogers, Kristine A. Bertness, Norman Sanford
We report high mechanical quality factors Q for GaN nanowire cantilevers grown by molecular beam epitaxy. Nanowires with 30-500 nm diameters and 5-20 υm lengths having resonance frequencies from 400 kHz to 2.8 MHz were measured. Q near room temperature and 10-4 Pa ranged from 2,700 to above 60,000 with most above 10,000. Positive feedback to a piezoelectric stack caused spontaneous nanowire oscillations with Q exceeding 106. Spontaneous oscillations also occured with direct e-beam excitation of unintentionally doped nanowires. Doped nanowires showed no oscillations, consistent with oscillation arising via direct actuation of piezoelectric GaN.
, Gray, J.
, Rogers, C.
, Bertness, K.
and Sanford, N.
High-Q GaN nanowire resonators and oscillators, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32729
(Accessed December 9, 2022)