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High-Q GaN nanowire resonators and oscillators



Shawn M. Tanner, Jason M. Gray, Charles T. Rogers, Kristine A. Bertness, Norman Sanford


We report high mechanical quality factors Q for GaN nanowire cantilevers grown by molecular beam epitaxy. Nanowires with 30-500 nm diameters and 5-20 υm lengths having resonance frequencies from 400 kHz to 2.8 MHz were measured. Q near room temperature and 10-4 Pa ranged from 2,700 to above 60,000 with most above 10,000. Positive feedback to a piezoelectric stack caused spontaneous nanowire oscillations with Q exceeding 106. Spontaneous oscillations also occured with direct e-beam excitation of unintentionally doped nanowires. Doped nanowires showed no oscillations, consistent with oscillation arising via direct actuation of piezoelectric GaN.
Applied Physics Letters


GaN, mechanical oscillators, nanowire


Tanner, S. , Gray, J. , Rogers, C. , Bertness, K. and Sanford, N. (2007), High-Q GaN nanowire resonators and oscillators, Applied Physics Letters, [online], (Accessed May 20, 2024)


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Created November 15, 2007, Updated October 12, 2021