Published: October 12, 2017
Marcelo I. Davanco, Liu Jin, Luca Sapienza, Chen-Zhao Zhang, Jose Vinicius De Miranda Cardoso, Varun B. Verma, Richard P. Mirin, Sae Woo Nam, Liu Liu, Kartik A. Srinivasan
Photonic integration is establishing itself as an enabling technology for photonic quantum science, offering considerably greater scalability, stability, and functionality than traditional bulk optics. Here, we develop a scalable, heterogeneous III-V / silicon integration platform to produce Si3N4 photonic circuits that directly incorporate GaAs-based nanophotonic devices containing self- assembled InAs/GaAs quantum dots. We demonstrate pure single-photon emission from single quantum dots in GaAs nanophotonic waveguides and cavities, directly launched into Si3N4 waveguides with > 90 % efficiency through evanescent coupling. We also show, within the same platform, strong control of the quantum dot radiative rate in GaAs microring cavities. InAs/GaAs quantum dots to date constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. In counterpoint, Si3N4 waveguides offer low-loss propagation with tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We anticipate our integration platform will enable a new class of scalable, efficient and versatile integrated quantum photonic devices.
Citation: Nature Communications
Pub Type: Journals
Quantum photonics, Heterogeneous integration, Nanophotonics, Quantum dots
Created October 12, 2017, Updated November 10, 2018