Balzaretti, N.
, Feldman, A.
, Etz, E.
and Gat, R.
(1999),
Growth Rate Dependence of the Thermal Conductivity of Chemical-Vapor-Deposited Diamond, Journal of Materials Research
(Accessed December 8, 2024)
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Growth Rate Dependence of the Thermal Conductivity of Chemical-Vapor-Deposited Diamond
Published
Author(s)
N M. Balzaretti, , , R Gat
Abstract
The in-plane thermal diffusivity of chemical-vapor-deposited diamond films was measured as a function of diamond-growth rate. The films, 0.1-0.4 mm thick, were prepared in microwave-plasma reactor at growht rates ranging from 1 to 10 m/h. A modification of ngstr m's method was used to perform the diffusivity measurements. The thermal conductivity calculated from the thermal diffusivity shows an inverse relationship with growth rate. Analyses of Raman spectra indicate that both the lineshifts and the line widths of the diamond Raman peak are practically independent of the deposition rate, except for the specimen grown at the highest growth rate.Citation
Journal of Materials Research
Volume
14
Issue
No. 9
Pub Type
Journals
Keywords
chemical vapor deposition, CVD, diamond, growth rate, line width, Raman spectroscopy, thermal conductivity, thermal diffusivity
Citation
Issues
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Created August 31, 1999, Updated October 12, 2021