Growth Rate Dependence of the Thermal Conductivity of Chemical-Vapor-Deposited Diamond

Published

September 1, 1999

Author(s)

N M. Balzaretti, A Feldman, E S. Etz, R Gat

Abstract

The in-plane thermal diffusivity of chemical-vapor-deposited diamond films was measured as a function of diamond-growth rate. The films, 0.1-0.4 mm thick, were prepared in microwave-plasma reactor at growht rates ranging from 1 to 10 m/h. A modification of ngstr m's method was used to perform the diffusivity measurements. The thermal conductivity calculated from the thermal diffusivity shows an inverse relationship with growth rate. Analyses of Raman spectra indicate that both the lineshifts and the line widths of the diamond Raman peak are practically independent of the deposition rate, except for the specimen grown at the highest growth rate.

Citation

Journal of Materials Research

Volume

14

Issue

No. 9

Pub Type

Journals

Keywords

chemical vapor deposition, CVD, diamond, growth rate, line width, Raman spectroscopy, thermal conductivity, thermal diffusivity

Citation

Balzaretti, N. , Feldman, A. , Etz, E. and Gat, R. (1999), Growth Rate Dependence of the Thermal Conductivity of Chemical-Vapor-Deposited Diamond, Journal of Materials Research (Accessed April 19, 2024)