Growth of GMR Spin Valves using Indium as a Surfactant

Published

January 1, 1996

Author(s)

William F. Egelhoff Jr., P J. Chen, Cedric J. Powell, Mark Stiles, Robert McMichael

Abstract

We have investigated the use of In as a surfactant to achieve smoother interfaces in spin-valve multilayers of the general type: FeMn/Ni₈₀Fe₂₀/Co/Cu/Co/Ni₈₀Fe₂₀/glass. The coupling field is reduced from 0.8 to 0.3 mT, presumably by suppressing roughness at the Co/Cu/Co interfaces, when 0.5-1.0 nm In is deposited on the first Co film just prior to Cu deposition or on the Cu film just prior to deposition of the second Co film. The In has a strong tendency to float-out to the surface during deposition of the spin valve leaving the spin-valve layers largely intact. The exchange bias at the FeMn/Ni₈₀Fe₂₀ interface can be increased from 12 to 25 mT by the use of thicker In(1.4 nm).

Citation

Journal of Applied Physics

Volume

79

Issue

5

Pub Type

Journals

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Citation

Egelhoff Jr., W. , Chen, P. , Powell, C. , Stiles, M. and McMichael, R. (1996), Growth of GMR Spin Valves using Indium as a Surfactant, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620468 (Accessed April 23, 2026)

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