Grazing Incidence X-Ray Photoemission Spectroscopy of Silicon Oxy-Nitride Ultrathin Films

Published

February 1, 2000

Author(s)

E Landree, Terrence J. Jach

Abstract

Grazing incidence X-ray photoemission spectroscopy (GIXPS) can be used to obtain both chemical and structural information to describe the depth profile for a given ultrathin film. This work describes the use of GIXPS to characterize thethickness of a silicon oxynitride ultrathin films grown on a silicon substrate. GIXPS utilizes the inherent optical and material properties of the film, along with the angle of the incident X-rays with respect to the sample surface to control the electric field penetration into the sample. By adjusting the angle of incident X-rays from zero to some value slightly greater than the angle for total X-ray external reflection, it is possible to nondestructively probe the nature of the film depth profile. The resulting angle dependent photoemission spectrum contains information that describes the physical properties of the sample, including density and thickness. Thickness measurements made using GIXPS will be compared to those acquired using other analytical techniques from the same group of samples.

Proceedings Title

Sigma Xi Post Doctoral Poster Presentations, 2000

Conference Dates

February 17-18, 2000

Conference Title

Sigma Xi Web Page

Pub Type

Conferences

Keywords

GIXPS, grazing incidence, ultrathin film, x-ray photoemission spectroscopy

Citation

Landree, E. and Jach, T. (2000), Grazing Incidence X-Ray Photoemission Spectroscopy of Silicon Oxy-Nitride Ultrathin Films, Sigma Xi Post Doctoral Poster Presentations, 2000 (Accessed July 30, 2025)