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Giant Magnetoresistive Spin-Valve Transpinnor

Published

Author(s)

S Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, L Sheppard, E J. Torok, J H. Judy

Abstract

A giant magnetoresistive (GMR) spin-valve Transpinnor, a new kind of active solid-state magneto-electronic device or spin-transistor, has been fabricated and investigated for the first time using anti-ferromagnetic oxide exchange biased bottom GMR spin-valves and metallic pseudo spin-valves. The electrical and magnetic device characteristics of typical transpinnors are GMR ratio 6% to 11% and sheet resistivity 5 /square depending on the type of spin valve. The purpose of this paper is to show that the magneto-electronic Transpinnor can be potentially substituted for many logic and semiconductor devices such as a bipolar differential amplifier or current source, OR, or AND logic gate, and multi-valued logic gates. In particular, a single-input transpinnor, is shown to have a large output current and voltage for possible use as a writing device in a transpinnor-one memory cell architecture for high-density GMR magnetic random access memory (MRAM) circuits. In addition, a dual-input differential amplifier transpinnor is shown to possess current-drive device characteristics due to easy control of output current range for possibly use to integrate with MRAM circuits as a current source for reading memory states.
Citation
Giant Magnetoresistive Spin-Valve Transpinnor

Keywords

amplifier, bottom GMR spin valve, logic device, new writing device for MRAM, psudo spin valves

Citation

Bae, S. , Zurn, S. , Egelhoff Jr., W. , Chen, P. , Sheppard, L. , Torok, E. and Judy, J. (2021), Giant Magnetoresistive Spin-Valve Transpinnor, Giant Magnetoresistive Spin-Valve Transpinnor (Accessed June 2, 2023)
Created October 12, 2021