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GaN Nanowires Grown by Molecular Beam Epitaxy



Kristine A. Bertness, Norman A. Sanford, Albert Davydov


The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and high mechanical quality factor. The high purity of the nanowires grown by this method allows for controllable ntype doping. P-type doping presents more challenges but has been demonstrated in active light- emitting diode devices. The present understanding of nucleation and growth of these materials is also reviewed.
IEEE Journal of Selected Topics in Quantum Electronics


Crystal growth, nanotechnology, photoluminescence, semiconductor materials


Bertness, K. , Sanford, N. and Davydov, A. (2011), GaN Nanowires Grown by Molecular Beam Epitaxy, IEEE Journal of Selected Topics in Quantum Electronics, [online], (Accessed June 24, 2024)


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Created August 1, 2011, Updated December 19, 2019