Frequency -and electric field-dependent physical model of ferroelectric materials in the 10s of GHz
Eric J. Marksz, Christian J. Long, James C. Booth, Ichiro Takeicjo, Nathan D. Orloff
Ferroelectric materials are attractive for tunable components because their permittivity can be controlled by an applied electric field. The permittivity of these materials depends on frequency, and can have a strongly nonlinear electric field dependence. A quantitative understanding of these behaviors is relevant for integration of tunable materials into devices. In this paper, we provide a simple closed-form expression for this dependence, which to our knowledge has never appeared in the literature. This expression is based on thermodynamic principles, and we expect it to be both widely applicable and generalizable. We test this model with measurements of transmission lines lithographically patterned on a ferroelectric thin film, and find that the relaxation timescales become shorter at higher bias fields. We attribute this faster relaxation to the steepening of th efree energy gradient when a bias field is applied, as opposed to any change in the nano-scale structure.
July 16-18, 2018
Ann Arbor, MI
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes
, Long, C.
, Booth, J.
, Takeicjo, I.
and Orloff, N.
Frequency -and electric field-dependent physical model of ferroelectric materials in the 10s of GHz, IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes, Ann Arbor, MI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926081
(Accessed October 25, 2021)