The Formation and Behavior of Particles in Silane Discharges
Particle growth in silane RF discharges and the incorporation of particles into hydrogenated-amorphous-silicon (a-Si: H) devices is described. Measurements of particle density and growth in a silane RF plasma, for particle diameters of 8-50 nm, are described. A decrease in particle density during the growth indicates a major flux of these size particles to the substrate. Particle densites are a very strong function of pressure, film growth rate and electrode gap, increasing orders of magnitude for small increases in each parameter. A full plasma-chemistry model for particle growth from SiHm radicals and ions has been developed, and is outlined. It yields particle densities and growth rates, as a function of plasma parameters which are in qualitative agreement with the data. It also indicates that, in addition to the diameter >2 nm particles that have been observed in films, a very large flux of SixHm molecular radicals with x > 1 also incorporate into the film. It appears that these large radicals yield more than 1% of the film for typical device-depostion conditions, so this may have a serious effect on device properties.
Proceedings of the Second International Conference on the Physics of Dusty Plasmas
May 24-28, 1999
Hotel Kowaki - en Hakone, JA
Frontiers in Dusty Plasmas
The Formation and Behavior of Particles in Silane Discharges, Proceedings of the Second International Conference on the Physics of Dusty Plasmas, Hotel Kowaki - en Hakone, JA
(Accessed March 5, 2024)